Overheating In Silicon During Pulsed-Laser Irradiation?
نویسندگان
چکیده
منابع مشابه
Pulsed Laser Porosification of Silicon Thin Films
We present a new and simple laser-based process to porosify thin film silicon using a pulsed laser. During deposition, we incorporate gas atoms or molecules into the Si thin film. Pulsed laser radiation of wavelength λ = 532 nm heats up thin film Si beyond its melting point. Upon heating, gas atoms or molecules form nm-sized thermally expanding gas bubbles in the silicon melt, until they explos...
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Vertically aligned ZnO nanowires have been synthesized by a hydrothermal method. After being irradiated by a short laser pulse, the tips of the as-synthesized ZnO nanowires can be tailored into a spherical shape. Transmission electron microscopy revealed that the spherical tip is a single-crystalline piece connected to the body of the ZnO nanowire, and that the center of the sphere is hollow. T...
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BACKGROUND AND OBJECTIVE Simultaneous irradiation and viewing of 10-120 microm cutaneous blood vessels were performed to investigate the effects of 2-micros 577-nm dye laser pulses. STUDY DESIGN/MATERIALS AND METHODS A modified scanning laser confocal microscope recorded vessel response to different radiant exposures (J/cm2). Probit analysis determined the 50% probability ("threshold") radian...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1985
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-51-113